We report on the high-power high-temperature long-pulse performance of the 8XX-nm diode laser bars and arrays, which
were recently developed at Lasertel Inc. for diode laser pumping within high-temperature (130 °C) environment without
any cooling. Since certain energy in each pulse is required, the diode laser bars have to provide both high peak power
and a nice pulse shape at 130 °C. Optimizing the epi-structure of the diode laser, the laser cavity and the distribution of
waste heat, we demonstrate over 40-millisecond long-pulse operation of the 8XX-nm CS bars at 130 °C and 100 A.
Pumping the bar with 5-Hz frequency 15-millisecond rectangular current pulses, we generate over 60 W peak power at
100 A and 130 °C. During the pulse duration, the pulse shape of the CS bars is well-maintained and the power almost
linearly decays with a rate of 1.9% peak power per millisecond at 130 °C and 100 A. Regardless of the pulse shape, this
laser bar can lase at very high temperature and output pulse can last for 8 ms/2ms at 170 °C/180 °C (both driven by 60 A
current pulses with 5-Hz frequency, 10 millisecond pulse width), respectively. To the best of our knowledge, this is the
highest operating temperature for a long-pulse 8XX-nm laser bar. Under the condition of 130 °C and 100 A, the laser bars
do not show any degradation after 310,000 10-millisecond current pulse shots. The performance of stack arrays at 130 °C
and 100 A are also presented. The development of reliable high-temperature diode laser bar paves the way for diode
laser long-pulse pumping within a high-temperature environment without any cooling.