High reliability and high performance of 9xx-nm single emitter laser diodes

L. Bao; P. Leisher; J. Wang; M. Devito; D. Xu; M. Grimshaw; W. Dong; X. Guan; S. Zhang; C. Bai; J. G. Bai; D. Wise; R. Martinsen

doi:10.1117/12.875869

21 February 2011 High reliability and high performance of 9xx-nm single emitter laser diodes

L. Bao, P. Leisher, J. Wang, M. Devito, D. Xu, M. Grimshaw, W. Dong, X. Guan, S. Zhang, C. Bai, J. G. Bai, D. Wise, R. Martinsen

Author Affiliations +

Proceedings Volume 7918, High-Power Diode Laser Technology and Applications IX; 791806 (2011) https://doi.org/10.1117/12.875869
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

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L. Bao, P. Leisher, J. Wang, M. Devito, D. Xu, M. Grimshaw, W. Dong, X. Guan, S. Zhang, C. Bai, J. G. Bai, D. Wise, and R. Martinsen "High reliability and high performance of 9xx-nm single emitter laser diodes", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791806 (21 February 2011); https://doi.org/10.1117/12.875869

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