Paper
21 February 2011 Variation of refractive index step of 635nm ridge waveguide lasers for optimized index guiding
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Abstract
We report on experimental and theoretical investigations concerning the influence of the ridge etching depth and the corresponding effective refractive index step on the electro-optical properties of ridge waveguide diode lasers emitting near 635 nm. We observe a suppression of higher order lateral modes for larger steps in effective index leading to a more homogeneous far field, as required e.g. in "flying spot" display applications. With the proper design choice, a total optical output power of P > 200 mW at 638 nm and 15°C and a beam quality M² < 2 could be achieved.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Feise, G. Blume, Chr. Kaspari, K. Paschke, and G. Erbert "Variation of refractive index step of 635nm ridge waveguide lasers for optimized index guiding", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791812 (21 February 2011); https://doi.org/10.1117/12.873397
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KEYWORDS
Refractive index

Etching

Semiconductor lasers

Waveguide lasers

Waveguides

Semiconducting wafers

Beam steering

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