MBE growth challenges of quantum dot saturable absorbers integrated into a MIXSEL

M. Golling; Y. Barbarin; T. Südmeyer; U. Keller

doi:10.1117/12.873548

21 February 2011 MBE growth challenges of quantum dot saturable absorbers integrated into a MIXSEL

M. Golling, Y. Barbarin, T. Südmeyer, U. Keller

Proceedings Volume 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs); 79190F (2011) https://doi.org/10.1117/12.873548
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

VECSELs modelocked with SESAMs are promising lasers for numerous applications. The MIXSEL concept integrates both laser gain and saturable absorber regions in one epitaxially grown semiconductor structure. This enables a particularly simple cavity design: only an external output coupler is needed. In the current MIXSEL realizations, the full structure is grown in one single growth run. This rises a number of epitaxial growth challenges, which we discuss in this paper.

Citation Download Citation

M. Golling, Y. Barbarin, T. Südmeyer, and U. Keller "MBE growth challenges of quantum dot saturable absorbers integrated into a MIXSEL", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190F (21 February 2011); https://doi.org/10.1117/12.873548

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available