In-Plane Electric Field Induced Quenching Of Photoluminescence In (Zn,Mn)Se Multiple Quantum Well Structure

B. Das; D. R. Andersen; M. Yamanishi; T. C. Bonsett; S. Datta; R. L. Gunshor; L. A. Kolodziejski

doi:10.1117/12.940825

11 August 1987 In-Plane Electric Field Induced Quenching Of Photoluminescence In (Zn,Mn)Se Multiple Quantum Well Structure

B. Das, D. R. Andersen, M. Yamanishi, T. C. Bonsett, S. Datta, R. L. Gunshor, L. A. Kolodziejski

Author Affiliations +

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940825
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

An investigation of the effect of an in-plane electric field on the photocurrent and photoluminescence characteristics of (Zn,Mn)Se multiple quantum well structures and ZnSe epilayers has been carried out. Measurements were performed on an epilayer and a multiple quantum well sample with well widths of 29Å and having a single 68Å. well interposed into the structure. The data observed clearly show evidence of photo-luminescence quenching and increase in photoconductivity due to ionization of excitons.

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B. Das, D. R. Andersen, M. Yamanishi, T. C. Bonsett, S. Datta, R. L. Gunshor, and L. A. Kolodziejski "In-Plane Electric Field Induced Quenching Of Photoluminescence In (Zn,Mn)Se Multiple Quantum Well Structure", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940825

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