Infrared Intersubband Absorption At 8.2 m In Doped Superlattices Of GaAs/AlAs

B. F. Levine; R. J. Malik; J. Walker; K. K. Choi; C. G. Bethea

doi:10.1117/12.940835

11 August 1987 Infrared Intersubband Absorption At 8.2 μm In Doped Superlattices Of GaAs/AlAs

B. F. Levine, R. J. Malik, J. Walker, K. K. Choi, C. G. Bethea

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940835
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Intersubband absorption has been measured in a 50 period superlattice composed 71 Å GaAs wells separated by 30 Å barriers of AlAs. The peak absorption was observed at 1224 cm-1 corresponding to 8.2 μm. The absorbed oscillation strength was extremely large in agree-ment with theory. Using a different superlattice having AlxGal-xAs barriers, we fabricated a detector sensitive to 10 μm infrared radiation. It had a responsivity of R= 0.52 A/W, and a narrow band spectral response of Δλ/λ = 10%.

Citation Download Citation

B. F. Levine, R. J. Malik, J. Walker, K. K. Choi, and C. G. Bethea "Infrared Intersubband Absorption At 8.2 μm In Doped Superlattices Of GaAs/AlAs", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940835

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