Resonant Tunneling In Double Barrier Heterostructures

M. A. Reed; R. T. Bate; J. W. Lee

doi:10.1117/12.940816

11 August 1987 Resonant Tunneling In Double Barrier Heterostructures

M. A. Reed, R. T. Bate, J. W. Lee

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940816
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Resonant tunneling in a variety of double barrier, single quantum well heterostructures has been investigated. Negative differential resistance has been observed by tunneling through both the ground and first excited quasistationary states of the quantum well. The peak positions agree well with a 65% conduction band offset. The tunnel barriers have been replaced by short period binary superlattices, where an anomalously low barrier height is observed. Resonant tunneling through a GaAs contact / double AlGaAs barrier / single InGaAs quantum well heterostructure has also been observed, where we have demonstrated tunneling through the first excited state above a ''hidden" ground state of the quantum well. Finally, we have observed resonant tunneling through a double barrier, single quantum well HgTe/Hg1-xCdxTe heterostructure where a peak-to-valley tunnel current ratio of 1.4:1 is observed at room temperature. This observation provides direct evidence for the existence of the proposed intrinsic interface state model.

Citation Download Citation

M. A. Reed, R. T. Bate, and J. W. Lee "Resonant Tunneling In Double Barrier Heterostructures", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940816

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