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11 August 1987 Second-Order Optical Susceptibility Of Strained GeSi/Si Superlattices And Ge/Si Layered Artificial Crystals
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940844
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A strain-induced ordered phase has been observed recently in the alloy layers fo a GeSi/ Si strained-layer superlattice, in which the ordered unit cell is non-centrosymmetric. Using the bond-charge model of Jha and Bloembergen, the second-order susceptibility and the linear electro-optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs. The calculation has also been extended to artificial crystals consisting of alternating bilayers of Si and Ge on (001) Si substrates recently reported. For the indicated structure, the Pockels coefficient vanishes in this case for E [001].
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lionel Friedman and Richard A. Soref "Second-Order Optical Susceptibility Of Strained GeSi/Si Superlattices And Ge/Si Layered Artificial Crystals", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940844
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