Sub-micron texturing of silicon wafer with fiber laser

Hamid Farrokhi; Wei Zhou; Hong Yu Zheng; Zhongli Li

doi:10.1117/12.874919

11 February 2011 Sub-micron texturing of silicon wafer with fiber laser

Hamid Farrokhi, Wei Zhou, Hong Yu Zheng, Zhongli Li

Proceedings Volume 7926, Micromachining and Microfabrication Process Technology XVI; 792607 (2011) https://doi.org/10.1117/12.874919
Event: SPIE MOEMS-MEMS, 2011, San Francisco, California, United States

Abstract

Laser texturing is extensively investigated for modifying surface properties. A continuous wave (CW) fiber laser (λ= 1090nm) was used to pattern a silicon wafer surface in ambient and O₂ atmosphere respectively. The O₂ gas stream was delivered through a coaxial nozzle to the laser spot. Characterization of the patterned features was carried out by surface profiling, scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS or EDX), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Formation of laser-induced silicon oxide sub-micron bumps was observed, which were analyzed and shown to cause changes in surface wetability and reflectivity.

Citation Download Citation

Hamid Farrokhi, Wei Zhou, Hong Yu Zheng, and Zhongli Li "Sub-micron texturing of silicon wafer with fiber laser", Proc. SPIE 7926, Micromachining and Microfabrication Process Technology XVI, 792607 (11 February 2011); https://doi.org/10.1117/12.874919

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