Hybrid organic light emitting device with silicon-rich oxide as hole transporting layer

G. Z. Ran; D. F. Jiang; Y. Yin; W. J. Xu

doi:10.1117/12.874624

21 February 2011 Hybrid organic light emitting device with silicon-rich oxide as hole transporting layer

G. Z. Ran, D. F. Jiang, Y. Yin, W. J. Xu

Proceedings Volume 7935, Organic Photonic Materials and Devices XIII; 793509 (2011) https://doi.org/10.1117/12.874624
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In order to combine both advantages of organic and inorganic materials and to solve the problem of mobility mismatch between hole transport layer (e.g. NPB) and electron transport layer (e.g. AlQ) of organic light emitting diodes, a mobility-tunable HTL of silicon-rich silicon oxide (Si_1+xO₂) is proposed. By changing the degree of excess silicon x, the mobility of Si_1+xO₂ can be controlled into a suitable range of ~10^-5 cm²·V^-1·s^-1 which matches well with that of AlQ. The organic light emitting devices fabricated on silicon substrates have a lower operating voltage of 6.0 V and a higher maximum power efficiency of 0.33 lm/W.

Citation Download Citation

G. Z. Ran, D. F. Jiang, Y. Yin, and W. J. Xu "Hybrid organic light emitting device with silicon-rich oxide as hole transporting layer", Proc. SPIE 7935, Organic Photonic Materials and Devices XIII, 793509 (21 February 2011); https://doi.org/10.1117/12.874624

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