Paper
21 February 2011 Ultrafast conditional carrier dynamics in semiconductor quantum dots
Paola Borri, Wolfgang Langbein
Author Affiliations +
Abstract
We provide direct evidence that the macroscopic response of the gain dynamics in electrically-pumped In- GaAs/GaAs quantum dots is a superposition of intradot relaxation dynamics from microstates with multiple discrete carrier numbers. The gain recovery in the presence of an optical pre-pump fully depleting the ground-state gain is measured to be faster than without pre-pump. This effect, opposite to expectations from rate equations with mean-field carrier distributions, is due to a conditional gain recovery in which microstates with slow internal dynamics are suppressed by the pre-pump. The effect is evident at 15K and still observable at 300 K, beneficial for high-speed optical signal processing.
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Paola Borri and Wolfgang Langbein "Ultrafast conditional carrier dynamics in semiconductor quantum dots", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793704 (21 February 2011); https://doi.org/10.1117/12.873835
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KEYWORDS
Ultrafast phenomena

Picosecond phenomena

Quantum dots

Superposition

Semiconductors

Absorption

Carrier dynamics

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