Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates

Takahiro Kitada; Fumiya Tanaka; Tomoya Takahashi; Ken Morita; Toshiro Isu

doi:10.1117/12.872103

21 February 2011 Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates

Takahiro Kitada, Fumiya Tanaka, Tomoya Takahashi, Ken Morita, Toshiro Isu

Author Affiliations +

Proceedings Volume 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV; 79371H (2011) https://doi.org/10.1117/12.872103
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

GaAs/AlAs coupled multilayer cavity structures on high-index substrates have been proposed as novel terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region are realized when two cavity layers are coupled by an intermediate distributed Bragg reflector multilayer. Optical responses to ultrashort laser pulses have been simulated using the transfer matrix method. Interference between the enhanced light fields of the cavity modes was demonstrated when they were simultaneously excited by 100 fs Gaussian pulses. Extremely strong sum-frequency generation was experimentally observed in the (113)B coupled multilayer cavity. We also found that the polarization control by wafer-bonding might be one of the best ways to generate terahertz difference-frequency signal of two modes.

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Takahiro Kitada, Fumiya Tanaka, Tomoya Takahashi, Ken Morita, and Toshiro Isu "Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 79371H (21 February 2011); https://doi.org/10.1117/12.872103

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