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2 March 2011 Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793904 (2011) https://doi.org/10.1117/12.874840
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
A new growth method, named droplet elimination by radical-beam irradiation (DERI), consisting of a metal-rich growth process (MRGP) and a droplet elimination process (DEP), was proposed for the growth of high-quality InN. The DERI method was also developed to the growth of InGaN ternally alloys. A periodic InN/InGaN structure was successfully fabricated using the phenomena that Ga was preferentially captured in a growing InGaN layer and In was forced outward to the surface in the MRGP and that the swept In was transformed to epitaxial InN on the InGaN underlayer in DEP. The DERI method enables the simple and reproducible growth of both high-quality InN film and peridic InN/InGaN structure by using in situ monitoring techniques.
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Tomohiro Yamaguchi, Tsutomu Araki, and Yasushi Nanishi "Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793904 (2 March 2011); https://doi.org/10.1117/12.874840
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