Etching formation of GaN micro optoelectronic device array

Qian Fan; Frank Lee; Kameshwar Yadavalli; Michael S. Lee; Chih-Li Chuang; Hussein El-Ghoroury

doi:10.1117/12.878579

10 March 2011 Etching formation of GaN micro optoelectronic device array

Qian Fan, Frank Lee, Kameshwar Yadavalli, Michael S. Lee, Chih-Li Chuang, Hussein El-Ghoroury

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793913 (2011) https://doi.org/10.1117/12.878579
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

GaN based micro emitter optoelectronic device array has been proved to be the core component for wide variety of applications such as microdisplay, biosensor, projection etc. Etching is one of the key steps to form the GaN micro emitter array device, including inductively coupled plasma (ICP) dry etch and alkaline solution wet etch. This paper reports the recent progress made by Ostendo Technologies Inc in fabricating the ultra-high density, large aspect-ratio etching formed monolithic GaN micro emitter optoelectronic device array. The unit density reaches 1M per cm², with good uniformity across the whole wafer. Perpendicular etching sidewall was achieved, with smooth surface roughness which is significance feature used for laser diodes (LDs) device.

Citation Download Citation

Qian Fan, Frank Lee, Kameshwar Yadavalli, Michael S. Lee, Chih-Li Chuang, and Hussein El-Ghoroury "Etching formation of GaN micro optoelectronic device array", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793913 (10 March 2011); https://doi.org/10.1117/12.878579

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