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10 March 2011 Two-dimensional drift-diffusion simulation of GaN HFETs
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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79391O (2011) https://doi.org/10.1117/12.877336
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
The electron transport properties of AlGaN/GaN heterojunction field effect transistors (HFETs) were studied by two-dimensional drift-diffusion (DD) modeling method. The model performs self-consistent numerical computation on the Poisson equation, carrier statistics and current and continuity equations. The spontaneous and piezoelectircal polarization charges uniquely for GaN material was taken into account, which influences significantly the electron distribution and current density. Sliced 1D Schrödinger equation along c direction was solved to obtain electron distribution. The electrical field at the 2DEG channel was found to have a peak position locates at the gate edge towards the drain side, reaching 106 V/cm at high bias condition. The surface potential boundary conditions also were found to have profound influence to the simulation results.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qian Fan and Hadis Morkoç "Two-dimensional drift-diffusion simulation of GaN HFETs", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391O (10 March 2011); https://doi.org/10.1117/12.877336
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