Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts

Shu-Yen Liu; Jhao-Cheng Ye; Yu-Chuan Lin; Kuo-Hua Chang; Ming-Lun Lee; Wei-Chih Lai; Jinn-Kong Sheu

doi:10.1117/12.876436

3 March 2011 Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts

Shu-Yen Liu, Jhao-Cheng Ye, Yu-Chuan Lin, Kuo-Hua Chang, Ming-Lun Lee, Wei-Chih Lai, Jinn-Kong Sheu

Author Affiliations +

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793925 (2011) https://doi.org/10.1117/12.876436
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

To enhance the efficiency of photogenerated electron collection in the n-type working electrode, Indium Tin oxide (ITO) finger-type ohmic contacts were immersed in NaCl electrolyte because ITO is a well-known transparent and conductive optical film and the ITO/n-GaN contact exhibited ohmic property when the carrier concentration of n-GaN were close to 1×10¹⁹/cm³. We found that the performances of the n-GaN photoelectrochemical cells with finger-type ITO ohmic contacts in photocurrent densities and hydrogen gas generation rates were both better than the n-GaN without finger-type ITO ohmic contacts. Related analyses have been performed and will be presented in this paper to explain the possible mechanism from the point of view of electrochemical analysis. Besides, after the photoelectrochemical measurements we observed that the adhesion of ITO/n-GaN contacts was pretty good. Finally, we did the surface analysis by scanning electron microscope (SEM) before and after the photoelectrochemical measurements to conform the surface morphology of ITO almost did not change in the NaCl electrolyte. This indicates that ITO is a good candidate material for the immersed ohmic contact in water splitting system.

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Shu-Yen Liu, Jhao-Cheng Ye, Yu-Chuan Lin, Kuo-Hua Chang, Ming-Lun Lee, Wei-Chih Lai, and Jinn-Kong Sheu "Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793925 (3 March 2011); https://doi.org/10.1117/12.876436

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