Growth of GaN single crystals by a Ca- and Ba-added Na flux method

H. Ukegawa; Y. Konishi; T. Fujimori; N. Miyoshi; M. Imade; M. Yoshimura; Y. Kitaoka; T. Sasaki; Y. Mori

doi:10.1117/12.875824

3 March 2011 Growth of GaN single crystals by a Ca- and Ba-added Na flux method

H. Ukegawa, Y. Konishi, T. Fujimori, N. Miyoshi, M. Imade, M. Yoshimura, Y. Kitaoka, T. Sasaki, Y. Mori

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392A (2011) https://doi.org/10.1117/12.875824
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

GaN substrates are desirable for fabricating ultra-violet LEDs and LDs, and high-power and high-frequency transistors. High-quality GaN single crystals can be obtained by using Na flux method, but the growth habit of bulk crystals must be controlled. In this study, we investigated the effects of additives (Ca, Ba) on the growth habit and impurity concentration in the crystals. The aspect ratio (c/a) of the crystals was increased by increasing the amount of additives, showing that the growth habit could be changed from the pyramidal shape to the prism shape. Ba concentration was below the detection limit (1x10¹⁵ atoms/cm³).

Citation Download Citation

H. Ukegawa, Y. Konishi, T. Fujimori, N. Miyoshi, M. Imade, M. Yoshimura, Y. Kitaoka, T. Sasaki, and Y. Mori "Growth of GaN single crystals by a Ca- and Ba-added Na flux method", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392A (3 March 2011); https://doi.org/10.1117/12.875824

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