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22 April 1987 Resonant Atr (Attenuated Total Reflection) Spectroscopy & The Nondestructive Characterization Of Multilayer Structures
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940925
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We introduce the Resonant ATR technique, a new non-destructive technique for the characterization of multilayer structures in terms of the thickness and composition of the various layers. After a review of the basic principles, the technique is exemplified through its application to the layer thickness determination of wafers used in the manufacture of heterostructure lasers.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno Bosacchi and Robert C. Oehrle "Resonant Atr (Attenuated Total Reflection) Spectroscopy & The Nondestructive Characterization Of Multilayer Structures", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940925
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