ZnO ultraviolet photodetectors grown via thermal oxidation of Zn-metal on glass and sapphire substrates

J. C. Moore; L. R Covington; R. L. Foster; E. J. Gee; M. R. Jones; S. A. Morris

doi:10.1117/12.873837

14 March 2011 ZnO ultraviolet photodetectors grown via thermal oxidation of Zn-metal on glass and sapphire substrates

J. C. Moore, L. R Covington, R. L. Foster, E. J. Gee, M. R. Jones, S. A. Morris

Proceedings Volume 7940, Oxide-based Materials and Devices II; 79401L (2011) https://doi.org/10.1117/12.873837
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We have investigated the optical and structural properties of polycrystalline zinc oxide (ZnO) films grown on glass and c-plane sapphire substrates. Zinc-metal films where grown on glass and sapphire substrates via dc-sputter deposition at room temperature with subsequent thermal annealing in air at 300° and 600°C. X-ray diffraction spectra indicate that after annealing, the resulting ZnO films possess a polycrystalline hexagonal wurtzite structure without a preferred orientation. Room-temperature photoluminescence (PL) spectra indicate that films annealed at 300°C exhibited the strongest ultraviolet (UV) emission intensity and lowest deep-level emission. Increasing deep-level green emission was observed with increasing annealing temperature for films grown on glass substrates, and a red shift in the excitonic UV band was observed for films grown on sapphire substrates. ZnO-based metal-semiconductor-metal (MSM) UV photodetectors where fabricated via sputter deposition of aluminum ohmic contacts on the resulting ZnO films. Decreasing photocurrent is seen for increasing annealing temperature, which is consistent with PL studies.

Citation Download Citation

J. C. Moore, L. R Covington, R. L. Foster, E. J. Gee, M. R. Jones, and S. A. Morris "ZnO ultraviolet photodetectors grown via thermal oxidation of Zn-metal on glass and sapphire substrates", Proc. SPIE 7940, Oxide-based Materials and Devices II, 79401L (14 March 2011); https://doi.org/10.1117/12.873837

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