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17 January 2011 Micro-cavities based on width modulated SOI waveguides
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Proceedings Volume 7943, Silicon Photonics VI; 79430T (2011)
Event: SPIE OPTO, 2011, San Francisco, California, United States
We have designed, fabricated and investigated one-dimensional (1D) micro-cavities in Silicon-on-Insulator (SOI) waveguides. The single mode waveguides are fabricated in a 220 nm silicon device layer. The 1D micro-cavities in Fabry-Perot structure consist of two Bragg-mirror regions formed by a sinusoidal modulation of the waveguide width. The mirror regions are separated by a sub-micron spacer. The SOI photonic structures are produced in a CMOS environment using 248 nm DUV lithography. The waveguides as well as the width modulated mirror regions are designed using a single mask and are fabricated in a shallow trench process. The transmission spectra of these width modulated micro-cavities with different mirror reflectivities and cavity lengths are investigated. Q-factors up to 855 could be observed at 1550 nm wavelength with low insertion loss of 1.9 dB. The width modulated micro-cavities, including the mirror regions, have lengths of less than 20 microns and widths of maximum 450 nm. These small foot-print cavities act as band pass filters and can be used as resonators for laser or electro-optic modulation of light.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Meister, Aws Al-Saadi, Bülent A. Franke, Shaimaa Mahdi, Miroslaw Szczambura, Berndt Kuhlow, Ulrike Woggon, Lars Zimmermann, Harald H. Richter, David Stolarek, Sigurd K. Schrader, and Hans J. Eichler "Micro-cavities based on width modulated SOI waveguides", Proc. SPIE 7943, Silicon Photonics VI, 79430T (17 January 2011);

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