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27 January 2011 Design of SOI wavelength filter based on multiple MMIs structures
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Proceedings Volume 7943, Silicon Photonics VI; 79430X (2011)
Event: SPIE OPTO, 2011, San Francisco, California, United States
SOI based MMIs prove to be versatile photonic structures for optical power splitting/combining, directional coupling, wavelength multiplexing/demultiplexing, etc. Such a structure benefits from relative ease of fabrication, low sensitivity to fabrication error and low temperature dependence. Whilst the majority of previous designs and optimizations investigated single MMIs, there is significant potential to combine MMIs within a single device for the realization of improved device performance. We have designed and simulated a wavelength filter device consisting of a series of MMIs with different lengths. The bandwidth, free spectral range, and extinction ratio can be controlled by changing the MMI's width and length. We have optimized our design to achieve a -3dB bandwidth of 5nm, a free spectral range of 60nm, an extinction ratio of >30dB, and a side peak suppression ratio of >22dB. Such a device can be used for high performance coarse wavelength filtering. The whole structure can fit into a 70μm×300μm area. Temperature sensitivity of the designed structures was also investigated.
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Youfang Hu, Frédéric Y. Gardes, Richard M. Jenkins, Ewan D. Finlayson, Goran Z Mashanovich, and Graham T. Reed "Design of SOI wavelength filter based on multiple MMIs structures", Proc. SPIE 7943, Silicon Photonics VI, 79430X (27 January 2011);

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