Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

N. Hattasan; L. Cerutti; J. B. Rodriguez; E. Tournié; D. Van Thourhout; G. Roelkens

doi:10.1117/12.874659

24 January 2011 Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

N. Hattasan, L. Cerutti, J. B. Rodriguez, E. Tournié, D. Van Thourhout, G. Roelkens

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451K (2011) https://doi.org/10.1117/12.874659
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Mid-infrared spectroscopy has gained significant importance in recent years as a detection technique for substances that absorb in this spectral region. Traditionally, a spectroscopic system consists of bulky equipment which is difficult to handle and incurs high cost. An integrated spectroscopic system would eliminate these disadvantages. GaSb-based active opto-electronic devices allow realizing mid-infrared light sources and detectors in the 2-3μm wavelength range for such integrated systems. Silicon photonics, based on Silicon-on-Insulator (SOI) waveguide circuits, on the other hand, is a well established technology based on high refractive index contrast waveguides, enabling ultra-compact passive integrated photonic circuits. Moreover, SOI waveguide circuit processing is compatible with CMOS processes. Hence, the integration of GaSb-based active devices onto SOI passive waveguide circuits potentially allows highly compact spectroscopic systems with a large degree of freedom in passive device design to improve the system performance. This approach has a high potential for several applications, e.g. an implantable glucose level monitor and gas sensing devices. In this paper, we report our work on the integration of GaSb-based epitaxy onto SOI waveguide circuits. The heterogeneous integration is based on an epitaxial layer transfer process using the polymer divinylsiloxanebenzocyclobutene (DVS-BCB) as a bonding agent. The process is performed by transferring the epitaxial layer to an SOI waveguide circuit wafer through a die-to-wafer bonding process. With this approach, a bonding layer of 150 nm thickness is easily achievable. We also report our results on the integration of waveguide-based GaSb p-i-n photodetectors coupled to SOI waveguide circuits using evanescent coupling, which show a responsivity higher than 0.4A/W. The design of active and passive structures and the overall fabrication process will also be discussed.

Citation Download Citation

N. Hattasan, L. Cerutti, J. B. Rodriguez, E. Tournié, D. Van Thourhout, and G. Roelkens "Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451K (24 January 2011); https://doi.org/10.1117/12.874659

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