Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Elena A. Plis; S. Myers; M. N. Kutty; J. Mailfert; E. P. Smith; S. Johnson; S. Krishna

doi:10.1117/12.873316

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24 January 2011 Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Elena A. Plis, S. Myers, M. N. Kutty, J. Mailfert, E. P. Smith, S. Johnson, S. Krishna

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Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451R (2011) https://doi.org/10.1117/12.873316
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We report on the investigation of lateral diffusion of minority carriers in InAsSb based photodetectors with the nBn design. Diffusion lengths (DL) were extracted from temperature dependent I-V measurements. The behavior of DL as a function of applied bias, temperature, and composition of the barrier layer was investigated. The obtained results suggest that lateral diffusion of minority carriers is not the limiting factor for InAsSb based nBn MWIR detector performance at high temperatures (> 200K). The detector with an As mole fraction of 10% in the barrier layer has demonstrated values of DL as low as 7 μm (V_b = 0.05V) at 240K.

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Elena A. Plis, S. Myers, M. N. Kutty, J. Mailfert, E. P. Smith, S. Johnson, and S. Krishna "Lateral diffusion of minority carriers in InAsSb-based nBn detectors", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451R (24 January 2011); https://doi.org/10.1117/12.873316

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