Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor

Jean Nguyen; Cory J. Hill; Don Rafol; Sam Keo; Alexander Soibel; David Z.-Y. Ting; Jason Mumolo; John Liu; Sarath D. Gunapala

doi:10.1117/12.875354

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24 January 2011 Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor

Jean Nguyen, Cory J. Hill, Don Rafol, Sam Keo, Alexander Soibel, David Z.-Y. Ting, Jason Mumolo, John Liu, Sarath D. Gunapala

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Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451T (2011) https://doi.org/10.1117/12.875354
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Low dark current and high fill factor are two crucial characteristics for the realization of the InAs/GaSb superlattice (SL) technology as third generation focal plane arrays (FPAs). Recent development proved high performance results for the complementary barrier infrared detector (CBIRD) design, and a high-quality etch technique is required to minimize surface leakage currents. We report on a n-CBIRD with 10.3 μm cutoff, exhibiting a responsivity of 1.7 A/W and dark current density of 1×10^-5 A/cm² at 77K under 0.2 V bias, without AR coating and without passivation. Results from four different mesa isolation techniques are compared on single element diodes: chemical wet etch using C₄H₆O₆:H₃PO₄:H₂O₂:H₂O, BCl₃/Ar inductively coupled plasma (ICP), CH4/H2/Ar ICP, and CH₄/H₂/BCl₃/Cl₂/Ar ICP. The CH₄/H₂/BCl₃/Cl₂/Ar etched structures yielded more than 2.5 times improvement in dark current density and nearvertical sidewalls. Using this etching technique, we then implement a 1k x 1k p-CBIRD array with 11.5 μm cutoff and peak responsivity of 3 A/W. Operating at T = 80K, the array yielded a 81% fill factor with 98% operability and performance results of 21% quantum efficiency, 53 mK NE▵T, and NEI of 6.9×10¹³ photons/sec-cm².

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Jean Nguyen, Cory J. Hill, Don Rafol, Sam Keo, Alexander Soibel, David Z.-Y. Ting, Jason Mumolo, John Liu, and Sarath D. Gunapala "Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451T (24 January 2011); https://doi.org/10.1117/12.875354

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