Antimony-based quantum dot memories

Dieter Bimberg; Andreas Marent; Tobias Nowozin; Andrei Schliwa

doi:10.1117/12.881232

1 March 2011 Antimony-based quantum dot memories

Dieter Bimberg, Andreas Marent, Tobias Nowozin, Andrei Schliwa

Proceedings Volume 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII; 79470L (2011) https://doi.org/10.1117/12.881232
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

As a type-II heterostructure with exclusive hole confinement GaSb/(Al,Ga)As QDs are an ideal candidate for a QD based memory device operating at room temperature. We investigated different Antimony-based QDs in respect of localization energies and storage times with 8-band-k•p calculations as well as time-resolved capacitance spectroscopy. In addition, we present a memory concept based on self-organized quantum dots (QDs) which could fuse the advantages of today's main semiconductor memories DRAM and Flash. First results on the performance of such a memory cell are shown and a closer look at Sb-based QDs as a storage unit is taken.

Citation Download Citation

Dieter Bimberg, Andreas Marent, Tobias Nowozin, and Andrei Schliwa "Antimony-based quantum dot memories", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470L (1 March 2011); https://doi.org/10.1117/12.881232

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