850 nm oxide high speed VCSEL development at Avago

Jingyi Wang; Chen Ji; David Soderstrom; Tong Jian; Laura Giovane; Sumon Ray; Zheng-Wen Feng; Friedhelm Hopfer; Jeong-Ki Hwang; Terry Sale; Sumitro Joyo Taslim; Chen Chu

doi:10.1117/12.875098

7 February 2011 850 nm oxide high speed VCSEL development at Avago

Jingyi Wang, Chen Ji, David Soderstrom, Tong Jian, Laura Giovane, Sumon Ray, Zheng-Wen Feng, Friedhelm Hopfer, Jeong-Ki Hwang, Terry Sale, Sumitro Joyo Taslim, Chen Chu

Author Affiliations +

Proceedings Volume 7952, Vertical-Cavity Surface-Emitting Lasers XV; 795205 (2011) https://doi.org/10.1117/12.875098
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In this paper we will discuss 14 Gb/s 850 nm oxide VCSEL performance and reliability. The device is targeted for the 16G Fibre Channel standard. The 14 Gb/s 850 nm oxide VCSEL meets the standard's specifications over the extended temperature range to support transceiver module operation from 0C to 85C.

Citation Download Citation

Jingyi Wang, Chen Ji, David Soderstrom, Tong Jian, Laura Giovane, Sumon Ray, Zheng-Wen Feng, Friedhelm Hopfer, Jeong-Ki Hwang, Terry Sale, Sumitro Joyo Taslim, and Chen Chu "850 nm oxide high speed VCSEL development at Avago", Proc. SPIE 7952, Vertical-Cavity Surface-Emitting Lasers XV, 795205 (7 February 2011); https://doi.org/10.1117/12.875098

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