Photoreflectance Spectra Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As

D. Huang; G. Ji; U. K. Reddy; H. Morkoc

doi:10.1117/12.940994

20 April 1987 Photoreflectance Spectra Of Al_xGa_1-xAs

D. Huang, G. Ji, U. K. Reddy, H. Morkoc

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940994
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The PR spectra of AlxGa1-xAs with different x values (0<x<0.46) were studied. It is demonstrated that PR can be an extremely useful technique in the alloy examination, especially the composition determination, by comparing the PR and the low temperature absorption spectra. The impurity band observed in PR spectra is also discussed.

Citation Download Citation

D. Huang, G. Ji, U. K. Reddy, and H. Morkoc "Photoreflectance Spectra Of Al_xGa_1-xAs", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.940994

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