Line width roughness control and pattern collapse solutions for EUV patterning

Karen Petrillo; George Huang; Dominic Ashworth; Jacque Georger; Liping Ren; K. Y. Cho; Warren Montgomery; Stefan Wurm; Shinichiro Kawakami; Shannon Dunn; Akiteryu Ko

doi:10.1117/12.879513

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7 April 2011 Line width roughness control and pattern collapse solutions for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Jacque Georger, Liping Ren, K. Y. Cho, Warren Montgomery, Stefan Wurm, Shinichiro Kawakami, Shannon Dunn, Akiteryu Ko

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Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 796913 (2011) https://doi.org/10.1117/12.879513
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Line width roughness (LWR) control is a critical issue in extreme ultraviolet lithography (EUVL). The difficulty of controlling LWR and the need to minimize it have grown as the sensitivity of materials and resolution in the resist patterning process has improved. Another critical feature that has become difficult to control in EUVL and 22nm half-pitch systems is pattern collapse. The increase of aspect ratio that comes from further scaling promotes the onset of pattern collapse. Both pattern collapse and LWR are easily observed in EUVL and leading-edge ArF immersion lithography. This paper will demonstrate recent gains in LWR control in leading EUV films using track-based processes, etch-based improvements, and the results of combined techniques. Also the use of a newly developed EUV-specific FIRM™ rinse chemistry to reduce pattern collapse will be discussed along with future development activities and industry requirements for both LWR and pattern collapse.

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Karen Petrillo, George Huang, Dominic Ashworth, Jacque Georger, Liping Ren, K. Y. Cho, Warren Montgomery, Stefan Wurm, Shinichiro Kawakami, Shannon Dunn, and Akiteryu Ko "Line width roughness control and pattern collapse solutions for EUV patterning", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796913 (7 April 2011); https://doi.org/10.1117/12.879513

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