Paper
7 April 2011 LPP source system development for HVM
David C. Brandt, Igor V. Fomenkov, Alex I. Ershov, William N. Partlo, David W. Myers, Richard L. Sandstrom, Bruno M. La Fontaine, Michael J. Lercel, Alexander N. Bykanov, Norbert R. Böwering, Georgiy O. Vaschenko, Oleh V. Khodykin, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Daniel J. Golich, Silvia De Dea, Richard R. Hou, Wayne J. Dunstan, Christian J. Wittak, Peter Baumgart, Toshihiko Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt
Author Affiliations +
Abstract
Laser produced plasma (LPP) systems have been developed as a viable approach for the EUV scanner light sources to support optical imaging of circuit features at sub-22nm nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. The status of first generation High Volume Manufacturing (HVM) sources in production and at a leading semiconductor device manufacturer is discussed. The EUV power at intermediate focus is discussed and the lastest data are presented. An electricity consumption model is described, and our current product roadmap is shown.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David C. Brandt, Igor V. Fomenkov, Alex I. Ershov, William N. Partlo, David W. Myers, Richard L. Sandstrom, Bruno M. La Fontaine, Michael J. Lercel, Alexander N. Bykanov, Norbert R. Böwering, Georgiy O. Vaschenko, Oleh V. Khodykin, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Daniel J. Golich, Silvia De Dea, Richard R. Hou, Wayne J. Dunstan, Christian J. Wittak, Peter Baumgart, Toshihiko Ishihara, Rod D. Simmons, Robert N. Jacques, and Robert A. Bergstedt "LPP source system development for HVM", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691H (7 April 2011); https://doi.org/10.1117/12.882208
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Cited by 12 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Scanners

Reflectivity

Plasma

Mirrors

Semiconducting wafers

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