Comparison between ADT and PPT for 2X DRAM patterning

Sunyoung Koo; Jun-Taek Park; Yoonsuk Hyun; Keundo Ban; Seokkyun Kim; Chang-Moon Lim; Donggyu Yim; Sungki Park

doi:10.1117/12.879450

8 April 2011 Comparison between ADT and PPT for 2X DRAM patterning

Sunyoung Koo, Jun-Taek Park, Yoonsuk Hyun, Keundo Ban, Seokkyun Kim, Chang-Moon Lim, Donggyu Yim, Sungki Park

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79691N (2011) https://doi.org/10.1117/12.879450
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Extreme Ultra-Violet (EUV) lithography is almost only solution reachable for next-generation lithography below 30nm half pitch with relative cost competitiveness. In this study, we investigate the feasibility of EUV lithography for applying 2X nm dynamic random access memory (DRAM) patterning. Very short wavelength of 13.5nm adds much more complexity to the lithography process. To understand for challenges of EUV lithography for high volume manufacturing (HVM), we study some EUV specific issues by using EUV full-field scanners, alpha demo tool (ADT) at IMEC and pre-production tool (PPT) at ASML. Good pattern fidelity of 2X nm node DRAM has been achieved by EUV ADT, such as dense line and dense contact-hole. In this paper, we report on EUV PPT performance such as resolution limit, MEEF, across slit CD uniformity (CDU) and focus & exposure latitude margin with 2X nm node DRAM layers in comparison with ADT performance. Due to less flare and aberration of PPT, we have expected that PPT shows good performance.

Citation Download Citation

Sunyoung Koo, Jun-Taek Park, Yoonsuk Hyun, Keundo Ban, Seokkyun Kim, Chang-Moon Lim, Donggyu Yim, and Sungki Park "Comparison between ADT and PPT for 2X DRAM patterning", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691N (8 April 2011); https://doi.org/10.1117/12.879450

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