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8 April 2011 Relationships between EUV resist outgassing and contamination deposition at Selete
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Abstract
This presentation summarizes the relationships between resist outgassing and contamination deposition for EUV resists, in the case of EUV irradiation with high illumination intensity (>100mW/cm2). These relationships were obtained by determining the resist outgassing species by gas chromatography-mass spectroscopy (GC-MS) and the contamination on optical elements by witness sample testing.
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Hiroaki Oizumi, Kazuyuki Matsumaro, Satoshi Nomura, Julius Joseph Santillan, Toshiro Itani, Takeo Watanabe, Naohiro Matsuda, Tetsuo Harada, and Hiroo Kinoshita "Relationships between EUV resist outgassing and contamination deposition at Selete", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796921 (8 April 2011); https://doi.org/10.1117/12.878571
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