Study of ion implantation into EUV resist for LWR improvement

Yukiko Kikuchi; Daisuke Kawamura; Hiroyuki Mizuno

doi:10.1117/12.879359

8 April 2011 Study of ion implantation into EUV resist for LWR improvement

Yukiko Kikuchi, Daisuke Kawamura, Hiroyuki Mizuno

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79692H (2011) https://doi.org/10.1117/12.879359
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

The potentiality of line width roughness (LWR) reduction by ion implantation (I/I) in the extreme ultra violet (EUV) lithography resist pattern was studied. The Argon ions were implanted to the Line-and-Space (L/S) pattern of EUV resist with changing ion energy, dose and incident angle. The LWR and line width of 32 nm half-pitch L/S pattern was evaluated after development, after I/I and after dry etching of the experimental thin hard mask beneath the resist pattern. The LWR of 4.2 nm 3 σ, corresponding to the reduction of 1.6 nm, was obtained for resist after I/I with relatively low energy condition of 1~5 keV. On the other hand, the best value of LWR after hard mask dry etching was 3.6 nm 3σ with I/I energy of 15 keV. It was found that preferable I/I condition for LWR reduction cannot be decided I/I alone but should be optimized combined with etching.

Citation Download Citation

Yukiko Kikuchi, Daisuke Kawamura, and Hiroyuki Mizuno "Study of ion implantation into EUV resist for LWR improvement", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692H (8 April 2011); https://doi.org/10.1117/12.879359

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