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22 April 1987 Engineering On NPN AlGaAs Heterojunction Bipolar Transistors
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941063
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Two device structures are presented which could solve two problems that an AlGaAs heterojunction bipolar transistor faces when it is used in GaAs integrated circuits. The first is the 2kT surface recombination current problem which seriously reduces the current gain as the device area becomes sufficiently small. It is found that by sandwiching a high bandgap P-type AlGaAs in the emitter-base junction interface, the 2kT current could be substantially reduced and the current gain displays flattened characteristics at low collector current (<1 μA). The second problem is how to reliably smooth out the potential spike at the base-collector interface which results in a serious reach-through phenomenon in the common emitter I-V characteristics of the transistors. It is found that by adding a thin spacer layer with the same composition but the opposite type as the base layer in the base-collector junction interface, the potential spike can be easily and reproducibly suppressed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chung-Zen Chen, Si-Chen Lee, and Hao-Hsiung Lin "Engineering On NPN AlGaAs Heterojunction Bipolar Transistors", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941063
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