Application of mask process correction (MPC) to monitor and correct mask process drift

Timothy Lin; Tom Donnelly; Gordon Russell; Sunwook Jung; Jiyoung Jeong

doi:10.1117/12.879119

28 March 2011 Application of mask process correction (MPC) to monitor and correct mask process drift

Timothy Lin, Tom Donnelly, Gordon Russell, Sunwook Jung, Jiyoung Jeong

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 797107 (2011) https://doi.org/10.1117/12.879119
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Temporal drift in the mask manufacturing process has been observed in CD measurements collected at different times. Most of this is corrected through global sizing and dose adjustments resulting in small mean-to-target (MTT) residual errors. However, this procedure does not account for a detectable change in the proximity behavior of the mask process. This paper discusses a procedure for detecting and monitoring the proximity behavior of a process using an targeted sampling plan. It also proposes a procedure to correct for drifts in proximity behavior if it is predictable and systematic.

Citation Download Citation

Timothy Lin, Tom Donnelly, Gordon Russell, Sunwook Jung, and Jiyoung Jeong "Application of mask process correction (MPC) to monitor and correct mask process drift", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797107 (28 March 2011); https://doi.org/10.1117/12.879119

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