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15 April 2011 Critical challenges for EUV resist materials
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Abstract
Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization phase, critical challenges remain in the development of EUV resist materials. The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements. Although several materials have met the resolution requirements, LER and sensitivity remain a challenge. As we move beyond the 22-nm node, however, even resolution remains a significant challenge. Chemically amplified resists have yet to demonstrate the required resolution at any speed or LER for 16-nm half pitch and below. Going to non-chemically amplified resists, however, 16-nm resolution has been achieved with a LER of 2 nm but a sensitivity of only 70 mJ/cm2.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick P. Naulleau, Christopher N. Anderson, Lorie-Mae Baclea-an, Paul Denham, Simi George, Kenneth A. Goldberg, Gideon Jones, Brittany McClinton, Ryan Miyakawa, Seno Rekawa, and Nate Smith "Critical challenges for EUV resist materials", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797202 (15 April 2011); https://doi.org/10.1117/12.882955
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