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15 April 2011Characterizing polymer bound PAG-type EUV resist
Blurs, swelling properties and lithographic performance for polymer bound PAG and polymer PAG blended type resists
were studied. A Blur strongly depends on PAG size and the polymer bound PAG type resist reduces the Blur. The Blur
for the polymer bound PAG type resist is smaller than that for ZEP (non CAR). That indicates that polymer bound PAG
should reduce secondary electron diffusion. The polymer bound PAG type resist acquires very small Blur with higher
sensitivity and suppresses swelling very well, therefore polymer bound PAG is one of the promising technologies that
improve Resolution, LWR and sensitivity (RLS) property. RLS property on EUV exposure tool is significantly
improved by using the polymer bound PAG type resist. Resolution reaches 24nmhp and is limited by pattern collapse
and line breaking. Further lithographic experiments on EB exposure tool which has higher NILS than EUV exposure
tool were carried out in order to make clear relation between Blur and resolution. The resolution of the polymer bound
PAG type resist reaches 17.5nmhp with 35nm thickness and there is possibility that the resolution of an optimized
polymer bound PAG type resist reaches under 15nmhp. The resolution of the resist with lower capillary force (C.F.)
given and lower swelling and on higher NILS exposure tool strongly depends on the Blur.