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15 April 2011 Optimization of pitch-split double patterning photoresist for applications at the 16nm node
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Abstract
Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to standard bright field applications.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven J. Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John C. Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, and Matthew Colburn "Optimization of pitch-split double patterning photoresist for applications at the 16nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720G (15 April 2011); https://doi.org/10.1117/12.881489
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