Paper
15 April 2011 EUV underlayer materials for 22nm HP and beyond
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Abstract
EUV lithography is expected to be an important technology for manufacturing 22 nm node and beyond in the semiconductor industry. To achieve the desired resist RLS performance for such fine feature patterns, multilayer materials are almost certainly needed to define the overall lithography process. The resist modeling and experiment studies suggest high EUV absorbance of the film improves resolution, line width roughness and sensitivity. In this paper, we report the studies of new EUV underlayers (EBL) based on crosslinkable organic underlayer materials with high EUV photon absorption (EPA) unit. The lithography results for the new EUV underlayer materials have demonstrated advantages over conventional organic underlayer in terms of resist sensitivity, resolution, process window, pattern profile, collapse margin, and possibly line width roughness.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huirong Yao, Zachary Bogusz, Jianhui Shan, Joonyeon Cho, Salem Mullen, Guanyang Lin, and Mark Neisser "EUV underlayer materials for 22nm HP and beyond", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797212 (15 April 2011); https://doi.org/10.1117/12.881639
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Cited by 10 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Electron beam lithography

Extreme ultraviolet lithography

Absorption

Line width roughness

Semiconducting wafers

Lithography

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