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15 April 2011 Process capability of implementing ArF negative resist into production
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Resist supplier has successfully demonstrated applying negative tone resist into ArF lithography. It is capable of achieving 50nm dense line and <30nm isolated space pattern by over dose operation in topcoat-free immersion lithography. Additionally, using ArF dry system with double exposure could also realize 65nm gridded contact hole patterns. For specific application, negative PR ArF lithography has better benefit of cost and process control capability than other approaches. In this paper, we have determined process capability of 65nm gridded contact hole by ArF dry double patterning and compared with LELE process in terms of DOF, EL and CDU and cost. By continuously optimizing process parameter, >0.21um DOF and 4.6nm global CDU are achieved on DRAM capacitor process. It revealed strong relation to development parameter setting. Furthermore, specific pattern formation considering optical items, ex: OPE, NRF (non-resolution feature) and interaction between double exposure have also been analyzed and difficulties of generating a specific pattern with negative tone resist double exposure have been figured out.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meng-Feng Tsai, Yang-Liang Li, Chan-Tsun Wu, Yi-Shiang Chang, and Chia-Chi Lin "Process capability of implementing ArF negative resist into production", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721B (15 April 2011);

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