Development of new Si-contained hardmask for tri-layer process

Makoto Nakajima; Yuta Kanno; Wataru Shibayama; Satoshi Takeda; Masakazu Kato; Takashi Matsumoto

doi:10.1117/12.879357

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15 April 2011 Development of new Si-contained hardmask for tri-layer process

Makoto Nakajima, Yuta Kanno, Wataru Shibayama, Satoshi Takeda, Masakazu Kato, Takashi Matsumoto

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Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 797225 (2011) https://doi.org/10.1117/12.879357
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

In the advanced semiconductor lithography process, the tri-layer process have been used for the essential technique{photoresist/ silicon contained hard mask (Si-HM) / spin on carbon hard mask (SOC)}(Figure 1). Tri-layer process was introduced and applied to the L/S and C/H patterning in the ArF dry and ArF immersion lithography process. Therefore, Si-HM should have the wider compatibility with different photoresist. In this paper, we investigate the interface behavior between photoresist and Si-HM in detail and get the new Si-HM to have the wider compatibility with different photoresist.

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Makoto Nakajima, Yuta Kanno, Wataru Shibayama, Satoshi Takeda, Masakazu Kato, and Takashi Matsumoto "Development of new Si-contained hardmask for tri-layer process", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797225 (15 April 2011); https://doi.org/10.1117/12.879357

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