Solutions for 22-nm node patterning using ArFi technology

Jo Finders; Mircea Dusa; Jan Mulkens; Yu Cao; Maryana Escalante

doi:10.1117/12.881598

5 April 2011 Solutions for 22-nm node patterning using ArFi technology

Jo Finders, Mircea Dusa, Jan Mulkens, Yu Cao, Maryana Escalante

Proceedings Volume 7973, Optical Microlithography XXIV; 79730U (2011) https://doi.org/10.1117/12.881598
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

ArF immersion lithography will be the main candidate for lithography patterning at the 22nm node. For both logic and memory type applications, double patterning techniques have to be applied to reach design pitches well below 70nm. In the lithography this combines aggressive imaging at low k₁ (0.28... 0.31) and aggressive absolute CDU requirements (approximately 6-10% of nominal CD) of 1.5..2nm 3σ. We will look into the lithography requirements to achieve such aggressive CDU numbers and will discuss solutions for achieving the required level of intra-field, inter-field, waferto- wafer and scanner-to-scanner CD variations

Citation Download Citation

Jo Finders, Mircea Dusa, Jan Mulkens, Yu Cao, and Maryana Escalante "Solutions for 22-nm node patterning using ArFi technology", Proc. SPIE 7973, Optical Microlithography XXIV, 79730U (5 April 2011); https://doi.org/10.1117/12.881598

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