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22 March 2011 Mask data correction methodology in the context of model-based fracturing and advanced mask models
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Abstract
The current equations used for back-scattering and fogging effect corrections are reviewed in the context of model-based fracturing where shots can overlap and the dose of each shot can be set individually. A new set of equations is proposed and verified. The formulation is shown to lift some restrictions imposed by the older formulation such as the minimum shot size dimension. The new equations validate the idea to use model-based mask data preparation to correct short range and possibly mid-range mask fabrication distortions and let the mask writer correct long range and very long range effects. Using current mask writing equipment, the correction of back-scattering and fogging effects for overlapping shots can be performed accurately if the dose correction of each shot takes into account all the shots. Verification of the theory was performed using directly the modified equations to calculate the dose for each shot. The simulation of the mask image after correction perfectly overlaps the target image defined using short range and midrange simulations.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christophe Pierrat, Larry Chau, and Ingo Bork "Mask data correction methodology in the context of model-based fracturing and advanced mask models", Proc. SPIE 7973, Optical Microlithography XXIV, 79732J (22 March 2011); https://doi.org/10.1117/12.881550
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