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1 April 2011 YieldStar: a new metrology platform for advanced lithography control
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Proceedings Volume 7985, 27th European Mask and Lithography Conference; 79850H (2011)
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany
As leading edge lithography is moving to 2x-nm design rules, lithography control complements resolution as one of the main drivers and enablers to meet the very stringent overlay, focus and CD requirements. As part of ASML's holistic lithography roadmap, ASML is developing several application-specific optimization and control applications, such as LithoTuner Pattern Matcher and BaseLiner. These applications are all explicitly designed to improve the scanner process window (overlay, focus, CDU and matching). All these applications have in common that they require vast amounts of precise, accurate and process robust wafer data (either taken on product stacks or on so-called monitor wafers). To provide such essential data in a cost-effective manner, ASML developed a metrology platform, called YieldStar. This platform is based on an angle-resolved high-NA scatterometer. It is versatile, as YieldStar's sensor can measure overlay, CD and focus in a single measurement. Thanks to its high speed, large amounts of measurements can be quickly collected. In this paper the latest generation YieldStar is presented, the so-called 200 platform. This YieldStar 200 can be used in a stand-alone configuration (S-200) or as an integrated module in a lithography track (T-200). First overlay results show good TMU results without comprising speed. Furthermore, data is shown that demonstrate YieldStar's capability to reconstruct 3D CD patterns as well.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jos Maas, Martin Ebert, Kaustuve Bhattacharyya, Hugo Cramer, Arthur Becht, Stefan Keij, Reinder Plug, Andreas Fuchs, Michael Kubis, Tom Hoogenboom, and Vidya Vaenkatesan "YieldStar: a new metrology platform for advanced lithography control", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850H (1 April 2011);

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