Current status of EUV mask inspection using 193nm optical inspection system in 30nm node and beyond

Sang Hoon Han; Jihoon Na; Wonil Cho; Dong Hoon Chung; Chan-Uk Jeon; HanKu Cho; Dana Bernstein; Eun Young Park; Anoop Sreenath; Shmoolik Mangan

doi:10.1117/12.895209

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1 April 2011 Current status of EUV mask inspection using 193nm optical inspection system in 30nm node and beyond

Sang Hoon Han, Jihoon Na, Wonil Cho, Dong Hoon Chung, Chan-Uk Jeon, HanKu Cho, Dana Bernstein, Eun Young Park, Anoop Sreenath, Shmoolik Mangan

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Proceedings Volume 7985, 27th European Mask and Lithography Conference; 79850V (2011) https://doi.org/10.1117/12.895209
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany

Abstract

Extreme Ultra Violet Lithography (EUVL) is one of the most advanced patterning technologies to overcome the critical resolution limits of current ArF lithography for 30nm generation node and beyond. Since EUVL mask manufacturing process has not been fully stabilized yet, it is still suffering from many defect issues such as blank defects, defects inside multilayer causing phase defects, CD defects, LERs (Line Edge Roughness), and so on. One of the most important roles in mask manufacturing process belongs to mask inspection tools, which monitor and visualize mask features, defects and process quality for the EUVL process development. Moreover, as the portion of EUV mask production has been increased due to the EUV Pre-Production Tool (PPT) development, mask inspection technologies for EUVL become highly urgent and critical to guarantee mask quality. This paper presents a promising inspection technique for increasing the contrast of pattern imaging and defects capture rate using configurable illumination conditions in 193nm wavelength inspection tool.

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Sang Hoon Han, Jihoon Na, Wonil Cho, Dong Hoon Chung, Chan-Uk Jeon, HanKu Cho, Dana Bernstein, Eun Young Park, Anoop Sreenath, and Shmoolik Mangan "Current status of EUV mask inspection using 193nm optical inspection system in 30nm node and beyond", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850V (1 April 2011); https://doi.org/10.1117/12.895209

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