Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Xiao Sun; Judy M. Rorison

doi:10.1117/12.889950

7 January 2011 Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Xiao Sun, Judy M. Rorison

Author Affiliations +

Proceedings Volume 7987, Optoelectronic Materials and Devices V; 79870E (2011) https://doi.org/10.1117/12.889950
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China

Abstract

It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is broadened resulting from band-tailing, localised states or conduction band edge fluctuations. In this paper we develop a model for N compositional fluctuations causing conduction band edge fluctuations which localise the electrons into the resulting quantum dots (QDs). The electron dynamics in the QDs and QW states are examined using a rate equation approach and the carrier populations presented as a function of barrier height and temperature. This mechanism could lead to broad gain in GaInAsN QW structures which could be useful for broad band SOAs for optical communications.

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Xiao Sun and Judy M. Rorison "Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870E (7 January 2011); https://doi.org/10.1117/12.889950

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