Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers

Keyong Chen; Xue Feng; Yidong Huang

doi:10.1117/12.888342

11 January 2011 Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO₂ multilayers

Keyong Chen, Xue Feng, Yidong Huang

Proceedings Volume 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II; 799102 (2011) https://doi.org/10.1117/12.888342
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China

Abstract

Layer-thickness dependence of Si-nanocrystal (Si-NC) formation induced by furnace annealing in amorphous Si (a-Si) /SiO₂ multilayers is experimentally demonstrated with a radio-frequency-sputtered sample that has a-Si layers with different thicknesses. Further, a modified model is developed to explain the Si-NC formation based on the Gibbs free energy variation and it takes into account the whole formation process including nucleation and following growth. The theoretical results show that there is a lower limit of Si layer thickness below which the crystal formation cannot occur for a-Si/SiO₂ multilayers, and the oxide interfaces cannot constrain the lateral growth of Si-NCs, which may lead to their touches within the Si layers.

Citation Download Citation

Keyong Chen, Xue Feng, and Yidong Huang "Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO₂ multilayers", Proc. SPIE 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II, 799102 (11 January 2011); https://doi.org/10.1117/12.888342

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