Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler

Sh. Payziyev; S. Bakhramov; A. Kasimov; F. Shayimov

doi:10.1117/12.881110

7 February 2011 Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler

Sh. Payziyev, S. Bakhramov, A. Kasimov, F. Shayimov

Proceedings Volume 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies; 79940D (2011) https://doi.org/10.1117/12.881110
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation

Abstract

By using a bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flash-lamp pumped Nd:YAG laser has been studied. It is shown that the mechanism of formation of the laser pulses, in a wide range of duration which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in a GaAs.

Citation Download Citation

Sh. Payziyev, S. Bakhramov, A. Kasimov, and F. Shayimov "Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940D (7 February 2011); https://doi.org/10.1117/12.881110

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