Paper
18 February 2011 Effect of silica doping on the stability of gasochromic films
Jiandong Wu, Guangming Wu, Guohua Gao, Zenghai Zhang, Wei Feng, Jun Shen, Zhihua Zhang
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950F (2011) https://doi.org/10.1117/12.888323
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
WO3 has emerged as one of the most extensively studied materials because its gasochromic effect can be used for smart window and gas sensor; currently it is widely used in many energy conservation areas. Compared with other preparations methods for gasoschromic films, sol-gel process shows several advantages, such as low cost and large-scale applications. However, sol-gel WO3 films were not stable enough for commercial application yet. In this paper, we first investigated the effect of SiO2 doping, which exhibited good enhancement of WO3 gasochromic films' stability. We also examined the relationship between SiO2 ratio and stability of WO3/SiO2 films. An empirical formula was established by fitting exponential decay of the coloring-bleaching cycles for four different Si/W ratios.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiandong Wu, Guangming Wu, Guohua Gao, Zenghai Zhang, Wei Feng, Jun Shen, and Zhihua Zhang "Effect of silica doping on the stability of gasochromic films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950F (18 February 2011); https://doi.org/10.1117/12.888323
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KEYWORDS
Silica

FT-IR spectroscopy

Switching

Doping

Sol-gels

Glasses

Semiconducting wafers

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