Paper
18 February 2011 Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method
Jianqiang Luo, Weiguo Liu, Shun Zhou, Xiaotao Sun
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950G (2011) https://doi.org/10.1117/12.888385
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianqiang Luo, Weiguo Liu, Shun Zhou, and Xiaotao Sun "Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950G (18 February 2011); https://doi.org/10.1117/12.888385
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KEYWORDS
Thin films

Sensors

Annealing

Dielectrics

Silica

Electrodes

Infrared sensors

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