Analysis on the surface uniformity and edge recombination of single-crystalline silicon solar cells on electrical parameters

Lu Huang; Jing Jin; Weimin Shi; Fanfeng Yu; Jie Sun; Haokun Hu; Zechun Cao; Guangpu Wei

doi:10.1117/12.888223

18 February 2011 Analysis on the surface uniformity and edge recombination of single-crystalline silicon solar cells on electrical parameters

Lu Huang, Jing Jin, Weimin Shi, Fanfeng Yu, Jie Sun, Haokun Hu, Zechun Cao, Guangpu Wei

Author Affiliations +

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950O (2011) https://doi.org/10.1117/12.888223
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

A model using Ansys software was established to simulate electrical parameters of solar cell when incident sunlight radiated on its surface. In the model, solar cell electrical parameters were experimentally characterized as the solar cell was exposed through hollow out mask. The experimental and numerical photovoltaic performances were completely matched. The results showed that the central field of solar cell had higher efficiency than the edge field of which on the same area exposed to sunlight. The results also showed that surface uniformity and edge recombination were two important loss mechanisms, which decreased solar cell efficiency.

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Lu Huang, Jing Jin, Weimin Shi, Fanfeng Yu, Jie Sun, Haokun Hu, Zechun Cao, and Guangpu Wei "Analysis on the surface uniformity and edge recombination of single-crystalline silicon solar cells on electrical parameters", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950O (18 February 2011); https://doi.org/10.1117/12.888223

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KEYWORDS

Solar cells

Silicon solar cells

Photovoltaics

Diodes

Electrons

3D metrology

Photons

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